Vishay Siliconix - SIHG22N60E-E3

KEY Part #: K6397697

SIHG22N60E-E3 Vidiny (USD) [18969pcs Stock]

  • 1 pcs$2.17265
  • 10 pcs$1.93908
  • 100 pcs$1.59005
  • 500 pcs$1.28755
  • 1,000 pcs$1.03020

Ampahany:
SIHG22N60E-E3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CH 600V 21A TO247AC.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF, Diodes - Mpihazakazaka - Iray, Diode - Zener - Arrays, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - Single, Transistors - JFET and Diodes - Miova endrika ny habeny (varicaps, varact ...
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We specialize in Vishay Siliconix SIHG22N60E-E3 electronic components. SIHG22N60E-E3 can be shipped within 24 hours after order. If you have any demands for SIHG22N60E-E3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHG22N60E-E3 Toetran'ny vokatra

Ampahany : SIHG22N60E-E3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 600V 21A TO247AC
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 21A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 180 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 86nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 1920pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 227W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-247AC
Famonosana / tranga : TO-247-3

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