Toshiba Semiconductor and Storage - TK31N60X,S1F

KEY Part #: K6397956

TK31N60X,S1F Vidiny (USD) [17128pcs Stock]

  • 1 pcs$2.64861
  • 30 pcs$2.12696
  • 120 pcs$1.93787
  • 510 pcs$1.56920
  • 1,020 pcs$1.32342

Ampahany:
TK31N60X,S1F
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 600V 30.8A TO-247.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - JFET, Transistor - Tanjona manokana, Diodes - Zener - Iray, Ny kristianao - SCR, Transistor - Unjunction Programmable and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage TK31N60X,S1F electronic components. TK31N60X,S1F can be shipped within 24 hours after order. If you have any demands for TK31N60X,S1F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK31N60X,S1F Toetran'ny vokatra

Ampahany : TK31N60X,S1F
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 600V 30.8A TO-247
Series : DTMOSIV-H
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 30.8A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 88 mOhm @ 9.4A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 3000pF @ 300V
Fihetsika FET : Super Junction
Fandroahana herinaratra (Max) : 230W (Tc)
Ny mari-pana : 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-247
Famonosana / tranga : TO-247-3

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