Vishay Semiconductor Diodes Division - S1GHE3_A/I

KEY Part #: K6456014

S1GHE3_A/I Vidiny (USD) [1218837pcs Stock]

  • 1 pcs$0.03035
  • 7,500 pcs$0.02825
  • 15,000 pcs$0.02511
  • 37,500 pcs$0.02354
  • 52,500 pcs$0.02093

Ampahany:
S1GHE3_A/I
Manufacturer:
Vishay Semiconductor Diodes Division
Famaritana antsipirihany:
DIODE GEN PURP 400V 1A DO214AC. Rectifiers 1A 400V 40A@8.3ms Single Die Auto
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Transistorio - Bipolar (BJT) - Arrays, Tratrao - TRIACs, Modules maotera mpamily, Transistors - Bipolar (BJT) - Single, Diodes - Miova endrika ny habeny (varicaps, varact, Diodes - Zener - Iray and Transistor - Tanjona manokana ...
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We specialize in Vishay Semiconductor Diodes Division S1GHE3_A/I electronic components. S1GHE3_A/I can be shipped within 24 hours after order. If you have any demands for S1GHE3_A/I, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

S1GHE3_A/I Toetran'ny vokatra

Ampahany : S1GHE3_A/I
Manufacturer : Vishay Semiconductor Diodes Division
Description : DIODE GEN PURP 400V 1A DO214AC
Series : -
Ampahany : Active
Type diode : Standard
Torohevitra - Reverse DC (Vr) (Max) : 400V
Ankehitriny - salanisa antonony (Io) : 1A
Volonta - Mandrosoa (Vf) (Max) @ Raha : 1.1V @ 1A
Speed : Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) : 1.8µs
Ankehitriny - Reverse Leakage @ Vr : 1µA @ 400V
Capacitance @ Vr, F : 12pF @ 4V, 1MHz
Type Type : Surface Mount
Famonosana / tranga : DO-214AC, SMA
Package Fitaovana mpamatsy : DO-214AC (SMA)
Ny mari-pana tsy miasa - Junction : -55°C ~ 150°C

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