SE10FJHM3/I Vidiny (USD) [996923pcs Stock]
- 1 pcs$0.03710
- 10,000 pcs$0.03392
- 30,000 pcs$0.03173
- 50,000 pcs$0.02918
- Ampahany:
- SE10FJHM3/I
- Manufacturer:
- Vishay Semiconductor Diodes Division
- Famaritana antsipirihany:
- DIODE GEN PURP 600V 1A DO219AB. Rectifiers 1A 600V SMF Rectifier
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny kristianao - SCR, Transistors - FET, MOSFET - RF, Transistors - FETs, MOSFETs - Single, Transistors - JFET, Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - IGBTs - Modules, Diode - Mpitaovana - Arrays and Diode - Zener - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Semiconductor Diodes Division SE10FJHM3/I electronic components. SE10FJHM3/I can be shipped within 24 hours after order. If you have any demands for SE10FJHM3/I, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SE10FJHM3/I Toetran'ny vokatra
Ampahany :
SE10FJHM3/I
Manufacturer :
Vishay Semiconductor Diodes Division
Description :
DIODE GEN PURP 600V 1A DO219AB
Series :
Automotive, AEC-Q101
Ampahany :
Active
Type diode :
Standard
Torohevitra - Reverse DC (Vr) (Max) :
600V
Ankehitriny - salanisa antonony (Io) :
1A
Volonta - Mandrosoa (Vf) (Max) @ Raha :
1.05V @ 1A
Speed :
Standard Recovery >500ns, > 200mA (Io)
Fotoana Famerenana amin'ny laoniny (trr) :
780ns
Ankehitriny - Reverse Leakage @ Vr :
5µA @ 600V
Capacitance @ Vr, F :
7.5pF @ 4V, 1MHz
Type Type :
Surface Mount
Famonosana / tranga :
DO-219AB
Package Fitaovana mpamatsy :
DO-219AB (SMF)
Ny mari-pana tsy miasa - Junction :
-55°C ~ 175°C
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-
RS07K-GS18
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