IPP80R1K4P7XKSA1 Vidiny (USD) [64496pcs Stock]
- 1 pcs$0.63133
- 10 pcs$0.55775
- 100 pcs$0.44093
- 500 pcs$0.32345
- 1,000 pcs$0.25535
- Ampahany:
- IPP80R1K4P7XKSA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 800V 4A TO220.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Zener - Iray, Transistors - JFET, Ny thyristors - DIAC, SIDACs, Diodes - Mpihazakazaka - Iray, Transistor - FET, MOSFET - Arrays, Transistors - Bipolar (BJT) - RF, Diode - Zener - Arrays and Tratrao - TRIACs ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPP80R1K4P7XKSA1 electronic components. IPP80R1K4P7XKSA1 can be shipped within 24 hours after order. If you have any demands for IPP80R1K4P7XKSA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPP80R1K4P7XKSA1 Toetran'ny vokatra
Ampahany :
IPP80R1K4P7XKSA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 800V 4A TO220
Series :
CoolMOS™
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
4A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.4 Ohm @ 1.4A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 70µA
Gate Charge (Qg) (Max) @ Vgs :
10nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
250pF @ 500V
Fihetsika FET :
Super Junction
Fandroahana herinaratra (Max) :
32W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
PG-TO220-3
Famonosana / tranga :
TO-220-3
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