SQM200N04-1M1L_GE3 Vidiny (USD) [40271pcs Stock]
- 1 pcs$0.97092
- 800 pcs$0.87385
- Ampahany:
- SQM200N04-1M1L_GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 40V 200A TO-263.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Modules, Transistor - Unjunction Programmable, Transistor - Tanjona manokana, Transistors - IGBTs - tokan-tena, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - RF, Transistors - IGBTs - Tafidina and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SQM200N04-1M1L_GE3 electronic components. SQM200N04-1M1L_GE3 can be shipped within 24 hours after order. If you have any demands for SQM200N04-1M1L_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQM200N04-1M1L_GE3 Toetran'ny vokatra
Ampahany :
SQM200N04-1M1L_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 40V 200A TO-263
Series :
TrenchFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
200A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.1 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
413nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
20655pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
375W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-263-7
Famonosana / tranga :
TO-263-7, D²Pak (6 Leads + Tab)
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