Infineon Technologies - IPA65R099C6XKSA1

KEY Part #: K6403167

IPA65R099C6XKSA1 Vidiny (USD) [2452pcs Stock]

  • 1 pcs$3.11134
  • 10 pcs$2.77729
  • 100 pcs$2.27723

Ampahany:
IPA65R099C6XKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 650V 38A TO220.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistorio - Bipolar (BJT) - Arrays, Ny kristianao - SCR, Transistor - FET, MOSFET - Arrays, Diode - Mpitaovana - Arrays, Diodes - Mpihazakazaka - Iray, Transistors - Bipolar (BJT) - Single, mialoha alik and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies IPA65R099C6XKSA1 electronic components. IPA65R099C6XKSA1 can be shipped within 24 hours after order. If you have any demands for IPA65R099C6XKSA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPA65R099C6XKSA1 Toetran'ny vokatra

Ampahany : IPA65R099C6XKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 38A TO220
Series : CoolMOS™
Ampahany : Obsolete
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 38A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 99 mOhm @ 12.8A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1.2mA
Gate Charge (Qg) (Max) @ Vgs : 127nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 2780pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 35W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO220 Full Pack
Famonosana / tranga : TO-220-3 Full Pack