Infineon Technologies - IPN80R2K4P7ATMA1

KEY Part #: K6405413

IPN80R2K4P7ATMA1 Vidiny (USD) [257208pcs Stock]

  • 1 pcs$0.14380

Ampahany:
IPN80R2K4P7ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
COOLMOS P7 800V SOT-223.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Transistors - Bipolar (BJT) - RF, Transistor - Tanjona manokana, Transistors - Bipolar (BJT) - Single, Transistors - FET, MOSFET - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diodes - Miova endrika ny habeny (varicaps, varact and Transistors - IGBTs - Tafidina ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies IPN80R2K4P7ATMA1 electronic components. IPN80R2K4P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPN80R2K4P7ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPN80R2K4P7ATMA1 Toetran'ny vokatra

Ampahany : IPN80R2K4P7ATMA1
Manufacturer : Infineon Technologies
Description : COOLMOS P7 800V SOT-223
Series : CoolMOS™ P7
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 2.5A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 2.4 Ohm @ 800mA, 10V
Vgs (th) (Max) @ Id : 3.5V @ 40µA
Gate Charge (Qg) (Max) @ Vgs : 7.5nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 150pF @ 500V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 6.3W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-SOT223
Famonosana / tranga : TO-261-3

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