Vishay Siliconix - SI3909DV-T1-GE3

KEY Part #: K6524055

[3960pcs Stock]


    Ampahany:
    SI3909DV-T1-GE3
    Manufacturer:
    Vishay Siliconix
    Famaritana antsipirihany:
    MOSFET 2P-CH 20V 6TSOP.
    Manufacturer's standard lead time:
    Ao amin'ny staoky
    Fiainana an-trano:
    Iray taona
    Chip From:
    Hong Kong
    RoHS:
    Fomba fandoavam-bola:
    Fomba fandefasana:
    Fianakaviana:
    KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Diodes - Rectifiers Bridge, Diode - Mpitaovana - Arrays, Diode - Zener - Arrays, Transistors - FET, MOSFET - RF, Transistors - IGBTs - Modules, Transistors - Bipolar (BJT) - RF and Diodes - Miova endrika ny habeny (varicaps, varact ...
    Ny tombony azo amin'ny fifaninanana:
    We specialize in Vishay Siliconix SI3909DV-T1-GE3 electronic components. SI3909DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3909DV-T1-GE3, Please submit a Request for Quotation here or send us an email:
    GB-T-27922
    ISO-9001-2015
    ISO-13485
    ISO-14001
    ISO-28000-2007
    ISO-45001-2018

    SI3909DV-T1-GE3 Toetran'ny vokatra

    Ampahany : SI3909DV-T1-GE3
    Manufacturer : Vishay Siliconix
    Description : MOSFET 2P-CH 20V 6TSOP
    Series : TrenchFET®
    Ampahany : Obsolete
    Type FET : 2 P-Channel (Dual)
    Fihetsika FET : Logic Level Gate
    Drain to Source Voltage (Vdss) : 20V
    Ankehitriny - Drain mitohy (Id) @ 25 ° C : -
    Rds On (Max) @ Id, Vgs : 200 mOhm @ 1.8A, 4.5V
    Vgs (th) (Max) @ Id : 500mV @ 250µA (Min)
    Gate Charge (Qg) (Max) @ Vgs : 4nC @ 4.5V
    Fampiasana masinina (Ciss) (Max) @ Vds : -
    Hery - Max : 1.15W
    Ny mari-pana : -55°C ~ 150°C (TJ)
    Type Type : Surface Mount
    Famonosana / tranga : SOT-23-6 Thin, TSOT-23-6
    Package Fitaovana mpamatsy : 6-TSOP

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