Infineon Technologies - IPP055N03LGXKSA1

KEY Part #: K6398469

IPP055N03LGXKSA1 Vidiny (USD) [78588pcs Stock]

  • 1 pcs$0.45155
  • 10 pcs$0.40179
  • 100 pcs$0.30026
  • 500 pcs$0.23285
  • 1,000 pcs$0.18383

Ampahany:
IPP055N03LGXKSA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 30V 50A TO-220-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diode - Mpitaovana - Arrays, Diodes - Rectifiers Bridge, Transistors - IGBTs - tokan-tena, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - Single, mialoha alik and Diode - Zener - Arrays ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPP055N03LGXKSA1 Toetran'ny vokatra

Ampahany : IPP055N03LGXKSA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 30V 50A TO-220-3
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 50A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 5.5 mOhm @ 30A, 10V
Vgs (th) (Max) @ Id : 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 31nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 3200pF @ 15V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 68W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : PG-TO220-3
Famonosana / tranga : TO-220-3

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