MT3S111P(TE12L,F) Vidiny (USD) [244499pcs Stock]
- 1 pcs$0.15128
- Ampahany:
- MT3S111P(TE12L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- RF TRANS NPN 6V 8GHZ PW-MINI.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Modules maotera mpamily, Ny kristianao - SCR, Transistors - Bipolar (BJT) - RF, Ny thyristors - DIAC, SIDACs, Transistors - FET, MOSFET - RF, Transistors - Bipolar (BJT) - Single, mialoha alik and Diodes - Mpihazakazaka - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage MT3S111P(TE12L,F) electronic components. MT3S111P(TE12L,F) can be shipped within 24 hours after order. If you have any demands for MT3S111P(TE12L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MT3S111P(TE12L,F) Toetran'ny vokatra
Ampahany :
MT3S111P(TE12L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
RF TRANS NPN 6V 8GHZ PW-MINI
Series :
-
Ampahany :
Active
Type Transistor :
NPN
Volonta - Famoronan'ny mpanangom-bokatra :
6V
Frequency - Tetezamita :
8GHz
Feo amin'ny feo (dB Typ @ f) :
1.25dB @ 1GHz
tombony :
10.5dB
Hery - Max :
1W
DC ankehitriny Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Ankehitriny - Collector (Ic) (Max) :
100mA
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
TO-243AA
Package Fitaovana mpamatsy :
PW-MINI
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