Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 600V 12A TO-3PN
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
600V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
12A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
400 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs :
14nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
720pF @ 10V
Fandroahana herinaratra (Max) :
144W (Tc)
Ny mari-pana :
150°C (TJ)
Package Fitaovana mpamatsy :
TO-3P(N)
Famonosana / tranga :
TO-3P-3, SC-65-3