MT3S113P(TE12L,F) Vidiny (USD) [221089pcs Stock]
- 1 pcs$0.16730
- Ampahany:
- MT3S113P(TE12L,F)
- Manufacturer:
- Toshiba Semiconductor and Storage
- Famaritana antsipirihany:
- RF TRANS NPN 5.3V 7.7GHZ PW-MINI.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Ny thyristors - DIAC, SIDACs, Transistors - FETs, MOSFETs - Single, Transistors - FET, MOSFET - RF, Diodes - Rectifiers Bridge, Transistors - Bipolar (BJT) - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - Unjunction Programmable and Diodes - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Toshiba Semiconductor and Storage MT3S113P(TE12L,F) electronic components. MT3S113P(TE12L,F) can be shipped within 24 hours after order. If you have any demands for MT3S113P(TE12L,F), Please submit a Request for Quotation here or send us an email: rfq@key-components.com
MT3S113P(TE12L,F) Toetran'ny vokatra
Ampahany :
MT3S113P(TE12L,F)
Manufacturer :
Toshiba Semiconductor and Storage
Description :
RF TRANS NPN 5.3V 7.7GHZ PW-MINI
Series :
-
Ampahany :
Active
Type Transistor :
NPN
Volonta - Famoronan'ny mpanangom-bokatra :
5.3V
Frequency - Tetezamita :
7.7GHz
Feo amin'ny feo (dB Typ @ f) :
1.45dB @ 1GHz
tombony :
10.5dB
Hery - Max :
1.6W
DC ankehitriny Gain (hFE) (Min) @ Ic, Vce :
200 @ 30mA, 5V
Ankehitriny - Collector (Ic) (Max) :
100mA
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
TO-243AA
Package Fitaovana mpamatsy :
PW-MINI
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