Infineon Technologies - IPC100N04S51R9ATMA1

KEY Part #: K6409656

IPC100N04S51R9ATMA1 Vidiny (USD) [178908pcs Stock]

  • 1 pcs$0.20674
  • 5,000 pcs$0.20344

Ampahany:
IPC100N04S51R9ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
N-CHANNEL30/40V.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Diodes - Mpihazakazaka - Iray, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single, Diodes - Zener - Iray, Transistor - Unjunction Programmable, Transistor - FET, MOSFET - Arrays and Diodes - Rectifiers Bridge ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPC100N04S51R9ATMA1 Toetran'ny vokatra

Ampahany : IPC100N04S51R9ATMA1
Manufacturer : Infineon Technologies
Description : N-CHANNEL30/40V
Series : Automotive, AEC-Q101, OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 100A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 7V, 10V
Rds On (Max) @ Id, Vgs : 1.9 mOhm @ 50A, 10V
Vgs (th) (Max) @ Id : 3.4V @ 50µA
Gate Charge (Qg) (Max) @ Vgs : 65nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 3770pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 100W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TDSON-8-34
Famonosana / tranga : 8-PowerTDFN