Toshiba Semiconductor and Storage - TK160F10N1L,LQ

KEY Part #: K6418601

TK160F10N1L,LQ Vidiny (USD) [69651pcs Stock]

  • 1 pcs$0.56138

Ampahany:
TK160F10N1L,LQ
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
X35 PB-F POWER MOSFET TRANSISTOR.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistors - JFET, Diode - Zener - Arrays, Diodes - Mpihazakazaka - Iray, Transistors - FETs, MOSFETs - Single, Transistor - Unjunction Programmable, Tratrao - TRIACs and Diodes - Zener - Iray ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK160F10N1L,LQ Toetran'ny vokatra

Ampahany : TK160F10N1L,LQ
Manufacturer : Toshiba Semiconductor and Storage
Description : X35 PB-F POWER MOSFET TRANSISTOR
Series : U-MOSVIII-H
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 160A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 2.4 mOhm @ 80A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 10100pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 375W (Tc)
Ny mari-pana : 175°C
Type Type : Surface Mount
Package Fitaovana mpamatsy : TO-220SM(W)
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB