Infineon Technologies - IPD65R380E6ATMA1

KEY Part #: K6419388

IPD65R380E6ATMA1 Vidiny (USD) [108938pcs Stock]

  • 1 pcs$0.33953
  • 2,500 pcs$0.31146

Ampahany:
IPD65R380E6ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 650V 10.6A TO252.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
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Fomba fandefasana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD65R380E6ATMA1 Toetran'ny vokatra

Ampahany : IPD65R380E6ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 650V 10.6A TO252
Series : CoolMOS™ E6
Ampahany : Not For New Designs
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 10.6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 380 mOhm @ 3.2A, 10V
Vgs (th) (Max) @ Id : 3.5V @ 320µA
Gate Charge (Qg) (Max) @ Vgs : 39nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 710pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 83W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TO252-3
Famonosana / tranga : TO-252-3, DPak (2 Leads + Tab), SC-63

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