SI7922DN-T1-GE3 Vidiny (USD) [103515pcs Stock]
- 1 pcs$0.37773
- 3,000 pcs$0.33477
- Ampahany:
- SI7922DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2N-CH 100V 1.8A 1212-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF, Diodes - Miova endrika ny habeny (varicaps, varact, Ny kristianao - SCR, Modules maotera mpamily, Diodes - RF and Transistor - FET, MOSFET - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI7922DN-T1-GE3 electronic components. SI7922DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7922DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI7922DN-T1-GE3 Toetran'ny vokatra
Ampahany :
SI7922DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 100V 1.8A 1212-8
Series :
TrenchFET®
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.8A
Rds On (Max) @ Id, Vgs :
195 mOhm @ 2.5A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
8nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
1.3W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
PowerPAK® 1212-8 Dual
Package Fitaovana mpamatsy :
PowerPAK® 1212-8 Dual
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