SISF00DN-T1-GE3 Vidiny (USD) [134082pcs Stock]
- 1 pcs$0.27586
- Ampahany:
- SISF00DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET DUAL N-CH 30V POWERPAK 12.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Transistors - IGBTs - tokan-tena, Modules maotera mpamily, Transistor - FET, MOSFET - Arrays, Ny kristianao - SCR, Tratrao - SCR - Modules, Transistors - FETs, MOSFETs - Single and Diode - Mpitaovana - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SISF00DN-T1-GE3 electronic components. SISF00DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISF00DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISF00DN-T1-GE3 Toetran'ny vokatra
Ampahany :
SISF00DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET DUAL N-CH 30V POWERPAK 12
Series :
TrenchFET® Gen IV
Ampahany :
Active
Type FET :
2 N-Channel (Dual) Common Drain
Fihetsika FET :
Standard
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
60A (Tc)
Rds On (Max) @ Id, Vgs :
5 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
53nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
2700pF @ 15V
Hery - Max :
69.4W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
PowerPAK® 1212-8SCD
Package Fitaovana mpamatsy :
PowerPAK® 1212-8SCD
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