Manufacturer :
Toshiba Semiconductor and Storage
Description :
MOSFET N-CH 12V 7A 6WCSP6C
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
12V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
7A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.5V, 4.5V
Rds On (Max) @ Id, Vgs :
18 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
5.4nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
600pF @ 6V
Fandroahana herinaratra (Max) :
1.6W (Ta)
Ny mari-pana :
150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
6-WCSPC (1.5x1.0)
Famonosana / tranga :
6-UFBGA, WLCSP