SISS26DN-T1-GE3 Vidiny (USD) [117334pcs Stock]
- 1 pcs$0.31523
- Ampahany:
- SISS26DN-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CHANNEL 60V 60A 1212-8S.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Diodes - RF, Transistors - IGBTs - Modules, Ny thyristors - DIAC, SIDACs, Tratrao - SCR - Modules, Diode - Zener - Arrays, Transistors - IGBTs - Tafidina and Diodes - Miova endrika ny habeny (varicaps, varact ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SISS26DN-T1-GE3 electronic components. SISS26DN-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SISS26DN-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SISS26DN-T1-GE3 Toetran'ny vokatra
Ampahany :
SISS26DN-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHANNEL 60V 60A 1212-8S
Series :
TrenchFET® Gen IV
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
60V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
60A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
4.5 mOhm @ 15A, 10V
Vgs (th) (Max) @ Id :
3.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
37nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1710pF @ 30V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
57W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® 1212-8S (3.3x3.3)
Famonosana / tranga :
PowerPAK® 1212-8S
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