[2460pcs Stock]
- Ampahany:
- IRF6892STR1PBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 25V 28A S3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - Tafidina, Ny kristianao - SCR, Diodes - Miova endrika ny habeny (varicaps, varact, Diodes - RF, Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - RF and Diode - Zener - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRF6892STR1PBF electronic components. IRF6892STR1PBF can be shipped within 24 hours after order. If you have any demands for IRF6892STR1PBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRF6892STR1PBF Toetran'ny vokatra
Ampahany :
IRF6892STR1PBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 25V 28A S3
Series :
HEXFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
25V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
28A (Ta), 125A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
1.7 mOhm @ 28A, 10V
Vgs (th) (Max) @ Id :
2.1V @ 50µA
Gate Charge (Qg) (Max) @ Vgs :
25nC @ 4.5V
Vgs (Max) :
±16V
Fampiasana masinina (Ciss) (Max) @ Vds :
2510pF @ 13V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.1W (Ta), 42W (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
DIRECTFET™ S3C
Famonosana / tranga :
DirectFET™ Isometric S3C
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