Manufacturer :
Rohm Semiconductor
Description :
MOSFET NCH 1.2KV 31A TO247N
teknolojia :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
1200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
31A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
104 mOhm @ 10A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 5mA
Gate Charge (Qg) (Max) @ Vgs :
60nC @ 18V
Fampiasana masinina (Ciss) (Max) @ Vds :
785pF @ 800V
Fandroahana herinaratra (Max) :
165W (Tc)
Ny mari-pana :
175°C (TJ)
Package Fitaovana mpamatsy :
TO-247N
Famonosana / tranga :
TO-247-3