Rohm Semiconductor - RQ6E085BNTCR

KEY Part #: K6420884

RQ6E085BNTCR Vidiny (USD) [280423pcs Stock]

  • 1 pcs$0.13190
  • 3,000 pcs$0.11128

Ampahany:
RQ6E085BNTCR
Manufacturer:
Rohm Semiconductor
Famaritana antsipirihany:
NCH 30V 8.5A MIDDLE POWER MOSFET.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Ny thyristors - DIAC, SIDACs, Transistors - JFET, Diodes - Mpihazakazaka - Iray, Transistor - FET, MOSFET - Arrays, Transistors - Bipolar (BJT) - RF and Transistors - Bipolar (BJT) - Single, mialoha alik ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Rohm Semiconductor RQ6E085BNTCR electronic components. RQ6E085BNTCR can be shipped within 24 hours after order. If you have any demands for RQ6E085BNTCR, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

RQ6E085BNTCR Toetran'ny vokatra

Ampahany : RQ6E085BNTCR
Manufacturer : Rohm Semiconductor
Description : NCH 30V 8.5A MIDDLE POWER MOSFET
Series : -
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 8.5A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 14.4 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id : 2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : 32.7nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 1350pF @ 15V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 1.25W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : SOT-457
Famonosana / tranga : SC-74, SOT-457