[1330pcs Stock]
- Ampahany:
- SI2327DS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CH 200V 0.38A SOT-23.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Diodes - Rectifiers Bridge, Ny kristianao - SCR, Transistors - FET, MOSFET - RF, Transistors - IGBTs - Modules, Transistorio - Bipolar (BJT) - Arrays, Ny thyristors - DIAC, SIDACs and Transistor - Tanjona manokana ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI2327DS-T1-GE3 electronic components. SI2327DS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2327DS-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI2327DS-T1-GE3 Toetran'ny vokatra
Ampahany :
SI2327DS-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 200V 0.38A SOT-23
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
380mA (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
6V, 10V
Rds On (Max) @ Id, Vgs :
2.35 Ohm @ 500mA, 10V
Vgs (th) (Max) @ Id :
4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
12nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
510pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
750mW (Ta)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
SOT-23-3 (TO-236)
Famonosana / tranga :
TO-236-3, SC-59, SOT-23-3
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