[1256pcs Stock]
- Ampahany:
- IPD320N20N3GBTMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 200V 34A TO252-3.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - RF, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Ny kristianao - SCR, Transistor - FET, MOSFET - Arrays, Transistors - IGBTs - tokan-tena and Transistors - Bipolar (BJT) - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPD320N20N3GBTMA1 electronic components. IPD320N20N3GBTMA1 can be shipped within 24 hours after order. If you have any demands for IPD320N20N3GBTMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD320N20N3GBTMA1 Toetran'ny vokatra
Ampahany :
IPD320N20N3GBTMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 34A TO252-3
Series :
OptiMOS™
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
34A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
32 mOhm @ 34A, 10V
Vgs (th) (Max) @ Id :
4V @ 90µA
Gate Charge (Qg) (Max) @ Vgs :
29nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2350pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
136W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO252-3
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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