IRL6372TRPBF Vidiny (USD) [239454pcs Stock]
- 1 pcs$0.15447
- 4,000 pcs$0.13247
- Ampahany:
- IRL6372TRPBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET 2N-CH 30V 8.1A 8SOIC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - Unjunction Programmable, Ny thyristors - DIAC, SIDACs, Transistor - Tanjona manokana, Tratrao - SCR - Modules, Diodes - Rectifiers Bridge, Transistors - IGBTs - Modules, Diodes - Miova endrika ny habeny (varicaps, varact and Ny kristianao - SCR ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRL6372TRPBF electronic components. IRL6372TRPBF can be shipped within 24 hours after order. If you have any demands for IRL6372TRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRL6372TRPBF Toetran'ny vokatra
Ampahany :
IRL6372TRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET 2N-CH 30V 8.1A 8SOIC
Series :
HEXFET®
Ampahany :
Active
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
30V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
8.1A
Rds On (Max) @ Id, Vgs :
17.9 mOhm @ 8.1A, 4.5V
Vgs (th) (Max) @ Id :
1.1V @ 10µA
Gate Charge (Qg) (Max) @ Vgs :
11nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
1020pF @ 25V
Hery - Max :
2W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
Package Fitaovana mpamatsy :
8-SO
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