SQ2318AES-T1_GE3 Vidiny (USD) [431769pcs Stock]
- 1 pcs$0.08567
- 3,000 pcs$0.07283
- Ampahany:
- SQ2318AES-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CHAN 40V SOT23.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - IGBTs - tokan-tena, Ny thyristors - DIAC, SIDACs, Transistors - FETs, MOSFETs - Single, Tratrao - TRIACs, Transistors - JFET, Transistor - Unjunction Programmable, Diodes - Miova endrika ny habeny (varicaps, varact and Diode - Zener - Arrays ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SQ2318AES-T1_GE3 electronic components. SQ2318AES-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQ2318AES-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQ2318AES-T1_GE3 Toetran'ny vokatra
Ampahany :
SQ2318AES-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 40V SOT23
Series :
Automotive, AEC-Q101, TrenchFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
8A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
31 mOhm @ 6A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
13nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
555pF @ 10V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
3W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
SOT-23-3 (TO-236)
Famonosana / tranga :
TO-236-3, SC-59, SOT-23-3
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