Infineon Technologies - IAUS300N08S5N012ATMA1

KEY Part #: K6395583

IAUS300N08S5N012ATMA1 Vidiny (USD) [22132pcs Stock]

  • 1 pcs$1.86214

Ampahany:
IAUS300N08S5N012ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 80V 300A PG-HSOG-8-1.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Diode - Mpitaovana - Arrays, Ny thyristors - DIAC, SIDACs, Transistors - IGBTs - Modules, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistor - Unjunction Programmable, Transistors - IGBTs - tokan-tena and Transistors - JFET ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IAUS300N08S5N012ATMA1 Toetran'ny vokatra

Ampahany : IAUS300N08S5N012ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 80V 300A PG-HSOG-8-1
Series : Automotive, AEC-Q101, OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 300A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 6V, 10V
Rds On (Max) @ Id, Vgs : 1.2 mOhm @ 100A, 10V
Vgs (th) (Max) @ Id : 3.8V @ 275µA
Gate Charge (Qg) (Max) @ Vgs : 231nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 16250pF @ 40V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 375W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-HSOG-8-1
Famonosana / tranga : 8-PowerSMD, Gull Wing