Infineon Technologies - BSZ033NE2LS5ATMA1

KEY Part #: K6420652

BSZ033NE2LS5ATMA1 Vidiny (USD) [225243pcs Stock]

  • 1 pcs$0.16421
  • 5,000 pcs$0.15848

Ampahany:
BSZ033NE2LS5ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 25V 18A 8SON.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Transistor - Unjunction Programmable, Transistors - FETs, MOSFETs - Single, Transistors - Bipolar (BJT) - Single, mialoha alik, Diode - Zener - Arrays, Ny thyristors - DIAC, SIDACs, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Ny kristianao - SCR ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

BSZ033NE2LS5ATMA1 Toetran'ny vokatra

Ampahany : BSZ033NE2LS5ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 25V 18A 8SON
Series : OptiMOS™
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 25V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 18A (Ta), 40A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 3.3 mOhm @ 20A, 10V
Vgs (th) (Max) @ Id : 2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 18.3nC @ 10V
Vgs (Max) : ±16V
Fampiasana masinina (Ciss) (Max) @ Vds : 1230pF @ 12V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 2.1W (Ta), 30W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TSDSON-8-FL
Famonosana / tranga : 8-PowerTDFN

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