[2615pcs Stock]
- Ampahany:
- GP1M006A065F
- Manufacturer:
- Global Power Technologies Group
- Famaritana antsipirihany:
- MOSFET N-CH 650V 5.5A TO220F.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Zener - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Diodes - Mpihazakazaka - Iray, Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - RF, Transistorio - Bipolar (BJT) - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Global Power Technologies Group GP1M006A065F electronic components. GP1M006A065F can be shipped within 24 hours after order. If you have any demands for GP1M006A065F, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
GP1M006A065F Toetran'ny vokatra
Ampahany :
GP1M006A065F
Manufacturer :
Global Power Technologies Group
Description :
MOSFET N-CH 650V 5.5A TO220F
Series :
-
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
5.5A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.6 Ohm @ 2.75A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
17nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
1177pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
39W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Through Hole
Package Fitaovana mpamatsy :
TO-220F
Famonosana / tranga :
TO-220-3 Full Pack
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