SUD35N10-26P-GE3 Vidiny (USD) [84291pcs Stock]
- 1 pcs$0.46388
- 2,000 pcs$0.43461
- Ampahany:
- SUD35N10-26P-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 100V 35A DPAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Transistor - Tanjona manokana, Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, Transistors - FETs, MOSFETs - Single, Diode - Mpitaovana - Arrays, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistors - Bipolar (BJT) - Single, mialoha alik ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SUD35N10-26P-GE3 electronic components. SUD35N10-26P-GE3 can be shipped within 24 hours after order. If you have any demands for SUD35N10-26P-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SUD35N10-26P-GE3 Toetran'ny vokatra
Ampahany :
SUD35N10-26P-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 100V 35A DPAK
Series :
TrenchFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
100V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
35A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
7V, 10V
Rds On (Max) @ Id, Vgs :
26 mOhm @ 12A, 10V
Vgs (th) (Max) @ Id :
4.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
47nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
2000pF @ 12V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
8.3W (Ta), 83W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-252, (D-Pak)
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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