Manufacturer :
Rohm Semiconductor
Description :
MOSFET NCH 650V 21A TO247N
teknolojia :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
21A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
156 mOhm @ 6.7A, 18V
Vgs (th) (Max) @ Id :
5.6V @ 3.33mA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 18V
Fampiasana masinina (Ciss) (Max) @ Vds :
460pF @ 500V
Fandroahana herinaratra (Max) :
103W (Tc)
Ny mari-pana :
175°C (TJ)
Package Fitaovana mpamatsy :
TO-247N
Famonosana / tranga :
TO-247-3