Ampahany :
IPL65R190E6AUMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 4VSON
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
20.2A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
190 mOhm @ 7.3A, 10V
Vgs (th) (Max) @ Id :
3.5V @ 700µA
Gate Charge (Qg) (Max) @ Vgs :
73nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
1620pF @ 100V
Fandroahana herinaratra (Max) :
151W (Tc)
Ny mari-pana :
-40°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-VSON-4
Famonosana / tranga :
4-PowerTSFN