Manufacturer :
Toshiba Semiconductor and Storage
Description :
PB-F POWER MOSFET TRANSISTOR TO-
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
57A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
40 mOhm @ 28.5A, 10V
Vgs (th) (Max) @ Id :
4V @ 2.85mA
Gate Charge (Qg) (Max) @ Vgs :
105nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
6250pF @ 300V
Fandroahana herinaratra (Max) :
360W (Tc)
Package Fitaovana mpamatsy :
TO-247
Famonosana / tranga :
TO-247-3