Manufacturer :
Rohm Semiconductor
Description :
MOSFET N-CH 650V 29A TO-220AB
teknolojia :
SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) :
650V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
29A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
18V
Rds On (Max) @ Id, Vgs :
156 mOhm @ 10A, 18V
Vgs (th) (Max) @ Id :
4V @ 3.3mA
Gate Charge (Qg) (Max) @ Vgs :
61nC @ 18V
Fampiasana masinina (Ciss) (Max) @ Vds :
1200pF @ 500V
Fandroahana herinaratra (Max) :
165W (Tc)
Ny mari-pana :
175°C (TJ)
Package Fitaovana mpamatsy :
TO-220AB
Famonosana / tranga :
TO-220-3