Vishay Siliconix - SIHG17N80E-GE3

KEY Part #: K6395905

SIHG17N80E-GE3 Vidiny (USD) [15612pcs Stock]

  • 1 pcs$2.63979
  • 10 pcs$2.35863
  • 100 pcs$1.93388
  • 500 pcs$1.56598
  • 1,000 pcs$1.32071

Ampahany:
SIHG17N80E-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N-CH 800V 15A TO247AC.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FET, MOSFET - RF, Transistors - JFET, Ny kristianao - SCR, Diodes - RF, Transistors - Bipolar (BJT) - RF, Diodes - Rectifiers Bridge, Transistorio - Bipolar (BJT) - Arrays, mialoha ali and Transistorio - Bipolar (BJT) - Arrays ...
Ny tombony azo amin'ny fifaninanana:
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SIHG17N80E-GE3 Toetran'ny vokatra

Ampahany : SIHG17N80E-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N-CH 800V 15A TO247AC
Series : E
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 15A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 290 mOhm @ 8.5A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 122nC @ 10V
Vgs (Max) : ±30V
Fampiasana masinina (Ciss) (Max) @ Vds : 2408pF @ 100V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 208W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Through Hole
Package Fitaovana mpamatsy : TO-247AC
Famonosana / tranga : TO-247-3