IRFR9N20DTRPBF Vidiny (USD) [194329pcs Stock]
- 1 pcs$0.19033
- 2,000 pcs$0.18272
- Ampahany:
- IRFR9N20DTRPBF
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N-CH 200V 9.4A DPAK.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - JFET, Diodes - RF, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistor - Tanjona manokana, Ny thyristors - DIAC, SIDACs, Tratrao - TRIACs, Transistors - FETs, MOSFETs - Single and Diodes - Rectifiers Bridge ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IRFR9N20DTRPBF electronic components. IRFR9N20DTRPBF can be shipped within 24 hours after order. If you have any demands for IRFR9N20DTRPBF, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IRFR9N20DTRPBF Toetran'ny vokatra
Ampahany :
IRFR9N20DTRPBF
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 200V 9.4A DPAK
Series :
HEXFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
9.4A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
380 mOhm @ 5.6A, 10V
Vgs (th) (Max) @ Id :
5.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
27nC @ 10V
Vgs (Max) :
±30V
Fampiasana masinina (Ciss) (Max) @ Vds :
560pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
86W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
D-Pak
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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