Ampahany :
IPD80R3K3P7ATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N-CH 800V 1.9A TO252-3
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.9A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
3.3 Ohm @ 590mA, 10V
Vgs (th) (Max) @ Id :
3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs :
5.8nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
120pF @ 500V
Fandroahana herinaratra (Max) :
18W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO252-3
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63