Infineon Technologies - IPD80R3K3P7ATMA1

KEY Part #: K6420797

IPD80R3K3P7ATMA1 Vidiny (USD) [257208pcs Stock]

  • 1 pcs$0.14380
  • 2,500 pcs$0.12572

Ampahany:
IPD80R3K3P7ATMA1
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 800V 1.9A TO252-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Rectifiers Bridge, Transistors - IGBTs - Tafidina, Ny kristianao - SCR, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Modules maotera mpamily, Transistor - Tanjona manokana, Tratrao - SCR - Modules and Transistors - FET, MOSFET - RF ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Infineon Technologies IPD80R3K3P7ATMA1 electronic components. IPD80R3K3P7ATMA1 can be shipped within 24 hours after order. If you have any demands for IPD80R3K3P7ATMA1, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IPD80R3K3P7ATMA1 Toetran'ny vokatra

Ampahany : IPD80R3K3P7ATMA1
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 800V 1.9A TO252-3
Series : CoolMOS™ P7
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 800V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 1.9A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 3.3 Ohm @ 590mA, 10V
Vgs (th) (Max) @ Id : 3.5V @ 30µA
Gate Charge (Qg) (Max) @ Vgs : 5.8nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 120pF @ 500V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 18W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : PG-TO252-3
Famonosana / tranga : TO-252-3, DPak (2 Leads + Tab), SC-63