Vishay Siliconix - SI4505DY-T1-GE3

KEY Part #: K6522258

SI4505DY-T1-GE3 Vidiny (USD) [151819pcs Stock]

  • 1 pcs$0.24485
  • 2,500 pcs$0.24363

Ampahany:
SI4505DY-T1-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET N/P-CH 30V/8V 8-SOIC.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diodes - Miova endrika ny habeny (varicaps, varact, Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Ny thyristors - DIAC, SIDACs, Transistorio - Bipolar (BJT) - Arrays, Transistors - IGBTs - tokan-tena, Ny kristianao - SCR and Diode - Zener - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SI4505DY-T1-GE3 electronic components. SI4505DY-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI4505DY-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI4505DY-T1-GE3 Toetran'ny vokatra

Ampahany : SI4505DY-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET N/P-CH 30V/8V 8-SOIC
Series : TrenchFET®
Ampahany : Active
Type FET : N and P-Channel
Fihetsika FET : Logic Level Gate
Drain to Source Voltage (Vdss) : 30V, 8V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 6A, 3.8A
Rds On (Max) @ Id, Vgs : 18 mOhm @ 7.8A, 10V
Vgs (th) (Max) @ Id : 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 20nC @ 5V
Fampiasana masinina (Ciss) (Max) @ Vds : -
Hery - Max : 1.2W
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Famonosana / tranga : 8-SOIC (0.154", 3.90mm Width)
Package Fitaovana mpamatsy : 8-SO