Vishay Siliconix - SI3443DDV-T1-GE3

KEY Part #: K6411842

SI3443DDV-T1-GE3 Vidiny (USD) [944660pcs Stock]

  • 1 pcs$0.03935
  • 3,000 pcs$0.03915

Ampahany:
SI3443DDV-T1-GE3
Manufacturer:
Vishay Siliconix
Famaritana antsipirihany:
MOSFET P-CHAN 20V TSOP6S.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistor - FET, MOSFET - Arrays, Transistor - Tanjona manokana, Transistors - FETs, MOSFETs - Single, Transistors - IGBTs - Tafidina, Diodes - Mpihazakazaka - Iray, Transistors - IGBTs - tokan-tena, Ny thyristors - DIAC, SIDACs and Tratrao - TRIACs ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Vishay Siliconix SI3443DDV-T1-GE3 electronic components. SI3443DDV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3443DDV-T1-GE3, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SI3443DDV-T1-GE3 Toetran'ny vokatra

Ampahany : SI3443DDV-T1-GE3
Manufacturer : Vishay Siliconix
Description : MOSFET P-CHAN 20V TSOP6S
Series : TrenchFET®
Ampahany : Active
Type FET : P-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 4A (Ta), 5.3A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 2.5V, 4.5V
Rds On (Max) @ Id, Vgs : 47 mOhm @ 4.5A, 4.5V
Vgs (th) (Max) @ Id : 1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 30nC @ 8V
Vgs (Max) : ±12V
Fampiasana masinina (Ciss) (Max) @ Vds : 970pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 1.7W (Ta), 2.7W (Tc)
Ny mari-pana : -55°C ~ 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : 6-TSOP
Famonosana / tranga : SOT-23-6 Thin, TSOT-23-6

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