SQJ479EP-T1_GE3 Vidiny (USD) [158976pcs Stock]
- 1 pcs$0.23266
- 3,000 pcs$0.19661
- Ampahany:
- SQJ479EP-T1_GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET P-CH 80V 32A POWERPAKSO-8.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Mpitaovana - Arrays, Transistor - Tanjona manokana, Transistors - IGBTs - Tafidina, Ny kristianao - SCR, Transistors - IGBTs - Modules, Transistors - FET, MOSFET - RF, Diodes - Rectifiers Bridge and Diodes - RF ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SQJ479EP-T1_GE3 electronic components. SQJ479EP-T1_GE3 can be shipped within 24 hours after order. If you have any demands for SQJ479EP-T1_GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SQJ479EP-T1_GE3 Toetran'ny vokatra
Ampahany :
SQJ479EP-T1_GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET P-CH 80V 32A POWERPAKSO-8
Series :
Automotive, AEC-Q101, TrenchFET®
Ampahany :
Active
Type FET :
P-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
80V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
32A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
4.5V, 10V
Rds On (Max) @ Id, Vgs :
33 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
150nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
4500pF @ 25V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
68W (Tc)
Ny mari-pana :
-55°C ~ 175°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® SO-8
Famonosana / tranga :
PowerPAK® SO-8
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