SIA777EDJ-T1-GE3 Vidiny (USD) [406296pcs Stock]
- 1 pcs$0.09149
- 3,000 pcs$0.09104
- Ampahany:
- SIA777EDJ-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N/P-CH 20V/12V SC70-6L.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistors - FETs, MOSFETs - Single, Transistors - FET, MOSFET - RF, Modules maotera mpamily, Transistors - IGBTs - Modules, Diodes - Zener - Iray, Transistors - Bipolar (BJT) - Single, mialoha alik and Transistorio - Bipolar (BJT) - Arrays, mialoha ali ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIA777EDJ-T1-GE3 electronic components. SIA777EDJ-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIA777EDJ-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIA777EDJ-T1-GE3 Toetran'ny vokatra
Ampahany :
SIA777EDJ-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N/P-CH 20V/12V SC70-6L
Series :
TrenchFET®
Ampahany :
Active
Type FET :
N and P-Channel
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V, 12V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
1.5A, 4.5A
Rds On (Max) @ Id, Vgs :
225 mOhm @ 1.6A, 4.5V
Vgs (th) (Max) @ Id :
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
2.2nC @ 5V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
5W, 7.8W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
PowerPAK® SC-70-6 Dual
Package Fitaovana mpamatsy :
PowerPAK® SC-70-6 Dual
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