Ampahany :
IPD50R650CEATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N CH 500V 6.1A PG-TO252
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
6.1A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 1.8A, 13V
Vgs (th) (Max) @ Id :
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Fampiasana masinina (Ciss) (Max) @ Vds :
342pF @ 100V
Fandroahana herinaratra (Max) :
69W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO252-3
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63