IPD50R650CEATMA1 Vidiny (USD) [2739pcs Stock]
- 2,500 pcs$0.11645
- Ampahany:
- IPD50R650CEATMA1
- Manufacturer:
- Infineon Technologies
- Famaritana antsipirihany:
- MOSFET N CH 500V 6.1A PG-TO252.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Ny thyristors - DIAC, SIDACs, Diodes - Miova endrika ny habeny (varicaps, varact, Ny kristianao - SCR, Diode - Mpitaovana - Arrays, Transistors - Bipolar (BJT) - RF, Transistors - FETs, MOSFETs - Single and Diodes - Zener - Iray ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Infineon Technologies IPD50R650CEATMA1 electronic components. IPD50R650CEATMA1 can be shipped within 24 hours after order. If you have any demands for IPD50R650CEATMA1, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
IPD50R650CEATMA1 Toetran'ny vokatra
Ampahany :
IPD50R650CEATMA1
Manufacturer :
Infineon Technologies
Description :
MOSFET N CH 500V 6.1A PG-TO252
Series :
CoolMOS™ CE
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
500V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
6.1A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
13V
Rds On (Max) @ Id, Vgs :
650 mOhm @ 1.8A, 13V
Vgs (th) (Max) @ Id :
3.5V @ 150µA
Gate Charge (Qg) (Max) @ Vgs :
15nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
342pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
69W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PG-TO252-3
Famonosana / tranga :
TO-252-3, DPak (2 Leads + Tab), SC-63
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