SIDR610DP-T1-GE3 Vidiny (USD) [48704pcs Stock]
- 1 pcs$0.80281
- Ampahany:
- SIDR610DP-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CHAN 200V PPAK SO-8DC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - Single, Transistors - IGBTs - Modules, Diodes - Zener - Iray, Ny kristianao - SCR, Diodes - Mpihazakazaka - Iray, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Tratrao - TRIACs and Transistor - Tanjona manokana ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SIDR610DP-T1-GE3 electronic components. SIDR610DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SIDR610DP-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SIDR610DP-T1-GE3 Toetran'ny vokatra
Ampahany :
SIDR610DP-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CHAN 200V PPAK SO-8DC
Series :
TrenchFET®
Ampahany :
Active
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
8.9A (Ta), 39.6A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
7.5V, 10V
Rds On (Max) @ Id, Vgs :
31.9 mOhm @ 10A, 10V
Vgs (th) (Max) @ Id :
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
38nC @ 10V
Vgs (Max) :
±20V
Fampiasana masinina (Ciss) (Max) @ Vds :
1380pF @ 100V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
6.25W (Ta), 125W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
PowerPAK® SO-8DC
Famonosana / tranga :
PowerPAK® SO-8
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