Description :
MOSFET N-CH 1000V 10A TO-267
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
1000V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
10A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
10V
Rds On (Max) @ Id, Vgs :
1.5 Ohm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs :
200nC @ 5V
Fampiasana masinina (Ciss) (Max) @ Vds :
5320pF @ 25V
Fihetsika FET :
Depletion Mode
Fandroahana herinaratra (Max) :
695W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
TO-268
Famonosana / tranga :
TO-268-3, D³Pak (2 Leads + Tab), TO-268AA