Toshiba Semiconductor and Storage - SSM3K37MFV,L3F

KEY Part #: K6418833

SSM3K37MFV,L3F Vidiny (USD) [2226700pcs Stock]

  • 1 pcs$0.01836
  • 8,000 pcs$0.01827

Ampahany:
SSM3K37MFV,L3F
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 20V 0.25A VESM.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Modules maotera mpamily, Transistorio - Bipolar (BJT) - Arrays, Transistors - Bipolar (BJT) - Single, mialoha alik, Transistors - IGBTs - Tafidina, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Transistors - Bipolar (BJT) - Single, Transistor - Unjunction Programmable and Transistors - IGBTs - tokan-tena ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage SSM3K37MFV,L3F electronic components. SSM3K37MFV,L3F can be shipped within 24 hours after order. If you have any demands for SSM3K37MFV,L3F, Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

SSM3K37MFV,L3F Toetran'ny vokatra

Ampahany : SSM3K37MFV,L3F
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 20V 0.25A VESM
Series : U-MOSIII
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 250mA (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 1.5V, 4.5V
Rds On (Max) @ Id, Vgs : 2.2 Ohm @ 100mA, 4.5V
Vgs (th) (Max) @ Id : 1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs : -
Vgs (Max) : ±10V
Fampiasana masinina (Ciss) (Max) @ Vds : 12pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 150mW (Ta)
Ny mari-pana : 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : VESM
Famonosana / tranga : SOT-723

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