Toshiba Semiconductor and Storage - TK50P04M1(T6RSS-Q)

KEY Part #: K6407504

TK50P04M1(T6RSS-Q) Vidiny (USD) [260070pcs Stock]

  • 1 pcs$0.15723
  • 2,000 pcs$0.15644

Ampahany:
TK50P04M1(T6RSS-Q)
Manufacturer:
Toshiba Semiconductor and Storage
Famaritana antsipirihany:
MOSFET N-CH 40V 50A DP TO252-3.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Ny thyristors - DIAC, SIDACs, Ny kristianao - SCR, Diode - Zener - Arrays, Diodes - Zener - Iray, Transistors - Bipolar (BJT) - RF, Transistors - FET, MOSFET - RF and Transistorio - Bipolar (BJT) - Arrays ...
Ny tombony azo amin'ny fifaninanana:
We specialize in Toshiba Semiconductor and Storage TK50P04M1(T6RSS-Q) electronic components. TK50P04M1(T6RSS-Q) can be shipped within 24 hours after order. If you have any demands for TK50P04M1(T6RSS-Q), Please submit a Request for Quotation here or send us an email:
GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

TK50P04M1(T6RSS-Q) Toetran'ny vokatra

Ampahany : TK50P04M1(T6RSS-Q)
Manufacturer : Toshiba Semiconductor and Storage
Description : MOSFET N-CH 40V 50A DP TO252-3
Series : U-MOSVI-H
Ampahany : Active
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 40V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 50A (Ta)
Fandefasana fiara (Max Rds On, Min Rds On) : 4.5V, 10V
Rds On (Max) @ Id, Vgs : 8.7 mOhm @ 25A, 10V
Vgs (th) (Max) @ Id : 2.3V @ 500µA
Gate Charge (Qg) (Max) @ Vgs : 38nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 2600pF @ 10V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 60W (Tc)
Ny mari-pana : 150°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : DP
Famonosana / tranga : TO-252-3, DPak (2 Leads + Tab), SC-63

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