SI4966DY-T1-E3 Vidiny (USD) [4035pcs Stock]
- 2,500 pcs$0.33771
- Ampahany:
- SI4966DY-T1-E3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET 2N-CH 20V 8SOIC.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Diode - Zener - Arrays, Diodes - Zener - Iray, Tratrao - TRIACs, Transistors - IGBTs - Modules, Ny thyristors - DIAC, SIDACs, Diode - Mpitaovana - Arrays, Tratrao - SCR - Modules and Transistors - FETs, MOSFETs - Single ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI4966DY-T1-E3 electronic components. SI4966DY-T1-E3 can be shipped within 24 hours after order. If you have any demands for SI4966DY-T1-E3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI4966DY-T1-E3 Toetran'ny vokatra
Ampahany :
SI4966DY-T1-E3
Manufacturer :
Vishay Siliconix
Description :
MOSFET 2N-CH 20V 8SOIC
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
2 N-Channel (Dual)
Fihetsika FET :
Logic Level Gate
Drain to Source Voltage (Vdss) :
20V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
-
Rds On (Max) @ Id, Vgs :
25 mOhm @ 7.1A, 4.5V
Vgs (th) (Max) @ Id :
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
50nC @ 4.5V
Fampiasana masinina (Ciss) (Max) @ Vds :
-
Hery - Max :
2W
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Famonosana / tranga :
8-SOIC (0.154", 3.90mm Width)
Package Fitaovana mpamatsy :
8-SO
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