[8714pcs Stock]
- Ampahany:
- SI8416DB-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Famaritana antsipirihany:
- MOSFET N-CH 8V 16A MICRO.
- Manufacturer's standard lead time:
- Ao amin'ny staoky
- Fiainana an-trano:
- Iray taona
- Chip From:
- Hong Kong
- RoHS:
- Fomba fandoavam-bola:
-
- Fomba fandefasana:
- Fianakaviana:
- KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - FETs, MOSFETs - Single, Modules maotera mpamily, Ny thyristors - DIAC, SIDACs, Tratrao - SCR - Modules, Diodes - Rectifiers Bridge, Diodes - Miova endrika ny habeny (varicaps, varact, Transistor - Tanjona manokana and Transistors - JFET ...
- Ny tombony azo amin'ny fifaninanana:
- We specialize in Vishay Siliconix SI8416DB-T1-GE3 electronic components. SI8416DB-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI8416DB-T1-GE3, Please submit a Request for Quotation here or send us an email: rfq@key-components.com
SI8416DB-T1-GE3 Toetran'ny vokatra
Ampahany :
SI8416DB-T1-GE3
Manufacturer :
Vishay Siliconix
Description :
MOSFET N-CH 8V 16A MICRO
Series :
TrenchFET®
Ampahany :
Obsolete
Type FET :
N-Channel
teknolojia :
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) :
8V
Ankehitriny - Drain mitohy (Id) @ 25 ° C :
16A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) :
1.2V, 4.5V
Rds On (Max) @ Id, Vgs :
23 mOhm @ 1.5A, 4.5V
Vgs (th) (Max) @ Id :
800mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs :
26nC @ 4.5V
Vgs (Max) :
±5V
Fampiasana masinina (Ciss) (Max) @ Vds :
1470pF @ 4V
Fihetsika FET :
-
Fandroahana herinaratra (Max) :
2.77W (Ta), 13W (Tc)
Ny mari-pana :
-55°C ~ 150°C (TJ)
Type Type :
Surface Mount
Package Fitaovana mpamatsy :
6-microfoot
Famonosana / tranga :
6-UFBGA
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