Infineon Technologies - IRF640NSTRRPBF

KEY Part #: K6419368

IRF640NSTRRPBF Vidiny (USD) [107556pcs Stock]

  • 1 pcs$0.34389
  • 800 pcs$0.25948

Ampahany:
IRF640NSTRRPBF
Manufacturer:
Infineon Technologies
Famaritana antsipirihany:
MOSFET N-CH 200V 18A D2PAK.
Manufacturer's standard lead time:
Ao amin'ny staoky
Fiainana an-trano:
Iray taona
Chip From:
Hong Kong
RoHS:
Fomba fandoavam-bola:
Fomba fandefasana:
Fianakaviana:
KEY Components Co., LTD dia Elektronika Mpanome Elektronika izay manolotra sokajy vokatra ao anatin'izany: Transistors - Bipolar (BJT) - RF, Transistor - FET, MOSFET - Arrays, Diode - Zener - Arrays, Diodes - Miova endrika ny habeny (varicaps, varact, Transistorio - Bipolar (BJT) - Arrays, mialoha ali, Ny kristianao - SCR, Transistors - Bipolar (BJT) - Single, mialoha alik and Transistor - Unjunction Programmable ...
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GB-T-27922
ISO-9001-2015
ISO-13485
ISO-14001
ISO-28000-2007
ISO-45001-2018

IRF640NSTRRPBF Toetran'ny vokatra

Ampahany : IRF640NSTRRPBF
Manufacturer : Infineon Technologies
Description : MOSFET N-CH 200V 18A D2PAK
Series : HEXFET®
Ampahany : Not For New Designs
Type FET : N-Channel
teknolojia : MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) : 200V
Ankehitriny - Drain mitohy (Id) @ 25 ° C : 18A (Tc)
Fandefasana fiara (Max Rds On, Min Rds On) : 10V
Rds On (Max) @ Id, Vgs : 150 mOhm @ 11A, 10V
Vgs (th) (Max) @ Id : 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs : 67nC @ 10V
Vgs (Max) : ±20V
Fampiasana masinina (Ciss) (Max) @ Vds : 1160pF @ 25V
Fihetsika FET : -
Fandroahana herinaratra (Max) : 150W (Tc)
Ny mari-pana : -55°C ~ 175°C (TJ)
Type Type : Surface Mount
Package Fitaovana mpamatsy : D2PAK
Famonosana / tranga : TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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